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參數(shù)資料
| 型號： | MRF7S19170HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數(shù)： | 11/13頁 |
| 文件大?。?/td> | 408K |
| 代理商： | MRF7S19170HSR3 |
MRF7S19170HR3 MRF7S19170HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
60
10
100
40
50
30
20
7th Order
5th Order
3rd Order
400
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 1955 MHz, f2 = 1965 MHz
TwoTone Measurements, 10 MHz Tone Spacing
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWOTONE SPACING (MHz)
10
60
VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1400 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
IM3U
10
20
40
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
50
30
IM3L
IM5U
IM5L
IM7L
IM7U
0
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
1
3
4
30
Actual
Ideal
0
2
OUTPUT
COMPRESSION
A
T
THE
0.01%
PROBABILITY
ON
THE
CCDF
(dB)
35
80
25
50
45
40
35
30
η
D,
DRAIN
EFFICIENCY
(%)
VDD = 28 Vdc, IDQ = 1400 mA
f = 1960 MHz, Input PAR = 7.5 dB
1 dB = 45 W
2 dB = 62 W
3 dB = 84 W
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Pout, OUTPUT POWER (dBm)
50
70
20
40
42
41
30
40
50
60
ACPR,
UPPER
AND
LOWER
RESUL
TS
(dBc)
43
44
45
46
47
Uncorrected, Upper and Lower
DPD Corrected
No Memory Correction
DPD Corrected
with Memory Correction
VDD = 28 Vdc, IDQ = 1400 mA, f = 1960 MHz
SingleCarrier WCDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
48
49
400
13
19
0
90
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1400 mA
f = 1960 MHz
TC = 30_C
25
_C
85
_C
10
1
18
17
16
15
14
75
60
45
30
15
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
100
30
_C
25
_C
85
_C
40
45
50
55
60
65
70
90
75
85
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S19170HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19210HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V 63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19210HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V 63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19210HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19210HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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