參數(shù)資料
型號: MRF7S19120NR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝: ROHS COMPLIANT, PLASTIC, CASE 1730-02, WBL-4, 4 PIN
文件頁數(shù): 8/14頁
文件大?。?/td> 512K
代理商: MRF7S19120NR1
MRF7S19120NR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 1930-1990 MHz Bandwidth
Video Bandwidth @ 120 W PEP Pout where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
20
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 36 W Avg.
GF
0.495
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 120 W CW
Φ
0.914
°
Average Group Delay @ Pout = 120 W CW, f = 1960 MHz
Delay
1.98
ns
Part-to-Part Insertion Phase Variation @ Pout = 120 W CW,
f = 1960 MHz, Six Sigma Window
ΔΦ
33.9
°
Gain Variation over Temperature
(-30
°C to +85°C)
ΔG
0.016
dB/
°C
Output Power Variation over Temperature
(-30
°C to +85°C)
ΔP1dB
0.009
dBm/
°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S19120NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF7S19170HR3 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19170HR5 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HS 制造商:Freescale Semiconductor 功能描述: 制造商:FREESCALE-SEMI 功能描述: