參數(shù)資料
型號(hào)： MRF7S19120NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： ROHS COMPLIANT, PLASTIC, CASE 1730-02, WBL-4, 4 PIN
文件頁(yè)數(shù)： 11/14頁(yè)
文件大?。?/td> 512K
代理商： MRF7S19120NR1
6
RF Device Data
Freescale Semiconductor
MRF7S19120NR1
TYPICAL CHARACTERISTICS
2040
1880
1980
1940
1920
1960
1900
2020
2000
G
ps
,POWER
GAIN
(dB)
2040
1880
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 36 Watts Avg.
VDD = 28 Vdc, Pout = 36 W (Avg.), IDQ = 1200 mA
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
1980
1940
1920
18.4
18
-3
36
35
34
33
32
-0.5
-1
-1.5
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
-20
-4
-8
-12
-16
η
D
,DRAIN
EFFICIENCY
(%)
1960
G
ps
,POWER
GAIN
(dB)
IRL
Gps
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 59 Watts Avg.
VDD = 28 Vdc, Pout = 59 W (Avg.), IDQ = 1200 mA
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
η
D
,DRAIN
EFFICIENCY
(%)
Figure 5. Two-T one Power Gain versus
Output Power
100
14
19
1
IDQ = 1800 mA
1500 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
600 mA
1200 mA
18
17
16
10
300
G
ps
,POWER
GAIN
(dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
-1 0
IDQ = 600 mA
Pout, OUTPUT POWER (WATTS) PEP
1200 mA
900 mA
1500 mA
10
-2 0
-3 0
-4 0
100
-60
-5 0
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
1
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
PARC
900 mA
300
1900
2020
2000
18.3
18.2
18.1
17.9
17.8
17.7
17.6
17.5
17.4
-2
-2.5
0
-20
-4
-8
-12
-16
0
17.6
16.8
-4.5
45
44
43
42
41
-2
-2.5
-3
17.4
17.2
17
16.6
16.4
16.2
16
15.8
15.6
-3.5
-4
15
350 mA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S19120NR1_09 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF7S19170HR3 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HR3_08 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19170HR5 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HS 制造商:Freescale Semiconductor 功能描述: 制造商:FREESCALE-SEMI 功能描述:
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