參數(shù)資料
型號： MRF7S19100NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4
文件頁數(shù)： 2/18頁
文件大?。?/td> 592K
代理商： MRF7S19100NR1
10
RF Device Data
Freescale Semiconductor
MRF7S19100NR1 MRF7S19100NBR1
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
46
62
32
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1000 mA
Pulsed CW, 12
μsec(on),
10% Duty Cycle, f = 1960 MHz
58
54
52
50
46
34
38
36
40
44
42
Actual
Ideal
60
56
48
30
P
out
,OUTPUT
POWER
(dBm)
P6dB = 52.12 dBm (162.60 W)
NOTE: Measured in a Peak Tuned Load Pull Fixture
P3dB = 51.61 dBm (144.90 W)
P1dB = 50.39 dBm
(109.50 W)
Test Impedances per Compression Level
Zsource
Ω
Zload
Ω
P3dB
4.39 - j5.66
1.81 - j3.27
Figure 16. Pulsed CW Output Power
versus Input Power
46
62
32
Pin, INPUT POWER (dBm)
VDD = 32 Vdc, IDQ = 1000 mA
Pulsed CW, 12
μsec(on),
10% Duty Cycle, f = 1960 MHz
58
54
52
50
46
34
38
36
40
44
42
Actual
Ideal
60
56
48
30
P
out
,OUTPUT
POWER
(dBm)
P6dB = 52.81 dBm (190.80 W)
NOTE: Measured in a Peak Tuned Load Pull Fixture
P3dB = 52.20 dBm (165.90 W)
P1dB = 50.94 dBm
(124.20 W)
Test Impedances per Compression Level
Zsource
Ω
Zload
Ω
P3dB
4.39 - j5.66
1.81 - j3.27
Figure 17. Pulsed CW Output Power
versus Input Power
相關(guān)PDF資料
PDF描述
MRF7S19100NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF7S19120NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF7S19170HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF7S19170HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S19100NR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19120NR1 功能描述:射頻MOSFET電源晶體管 1990MHZ 36W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19120NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF7S19170HR3 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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