參數(shù)資料
型號(hào)： MRF7S19100NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4
文件頁(yè)數(shù)： 16/18頁(yè)
文件大?。?/td> 592K
代理商： MRF7S19100NR1
MRF7S19100NR1 MRF7S19100NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
70
10
1
100
40
50
10
30
20
60
7th Order
5th Order
3rd Order
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
1
3
5
30
Actual
Ideal
0
2
4
OUTPUT
COMPRESSION
A
T
THE
0.01%
PROBABILITY
ON
CCDF
(dB)
3 dB = 47 W
300
14
20
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1000 mA
f = 1960 MHz
TC = 30_C
25
_C
85
_C
30
_C
25
_C
85
_C
10
1
19
18
17
16
15
50
40
30
20
10
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
20
40
200
VDD = 28 Vdc, IDQ = 1000 mA
f1 = 1955 MHz, f2 = 1965 MHz
TwoTone Measurements, 10 MHz Tone Spacing
50
60
100
20
50
45
40
35
30
25
η
D,
DRAIN
EFFICIENCY
(%)
VDD = 28 Vdc, IDQ = 1000 mA
f = 1960 MHz, Input PAR = 7.5 dB
1 dB = 25 W
2 dB = 35 W
TWOTONE SPACING (MHz)
10
0
10
20
40
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
50
30
60
IM7U
IM7L
IM3U
IM3L
IM5U
IM5L
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
相關(guān)PDF資料
PDF描述
MRF7S19100NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF7S19120NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF7S19170HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF7S19170HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF7S19210HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S19100NR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19120NR1 功能描述:射頻MOSFET電源晶體管 1990MHZ 36W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19120NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF7S19170HR3 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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