參數(shù)資料
型號(hào): MRF7S18125BHR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
文件頁(yè)數(shù): 12/14頁(yè)
文件大小: 471K
代理商: MRF7S18125BHR3
MRF7S18125BHR3 MRF7S18125BHSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
60
Pin, INPUT POWER (dBm)
53
51
50
34
37
35
Actual
Ideal
52
36
38
39
Figure 7. Pulsed CW Output Power versus
Input Power
P
out
,OUTPUT
POWER
(dBc)
P6dB = 52.59 dBm (181.6 W)
54
55
56
57
40
41
42
43
VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW
12
μsec(on), 1% Duty Cycle, f = 1960 MHz
300
18
15
VDD = 28 Vdc
IDQ = 1100 mA
f = 1960 MHz
TC = 30_C
25
_C
30
_C
10
30
20
Pout, OUTPUT POWER (WATTS) CW
Figure 8. Power Gain and Drain Efficiency
versus Output Power
G
ps
,POWER
GAIN
(dB)
Gps
17.5
17
100
40
25
_C
85
_C
58
59
P3dB = 52.16 dBm (164.4 W)
P1dB = 51.61 dBm
(145 W)
16.5
16
15.5
15
14.5
14
13.5
13
25
35
45
50
55
60
65
85
_C
Figure 9. EVM versus Frequency
f, FREQUENCY (MHz)
Pout = 78 W Avg.
18 W Avg.
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
0
6
3
1
4
2
VDD = 28 Vdc
IDQ = 1100 mA
EDGE Modulation
50 W Avg.
50
SR @ 400 kHz
f, FREQUENCY (MHz)
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
55
60
65
Pout = 78 W Avg.
SR @ 600 kHz
50 W Avg.
SPECTRAL
REGROWTH
@
400
kHz
AND
600
kHz
(dBc)
70
75
80
VDD = 28 Vdc
IDQ = 1100 mA
EDGE Modulation
78 W Avg.
18 W Avg.
TC = 30_C
25
_C
85
_C
75
35
0
Pout, OUTPUT POWER (WATTS)
50
55
60
70
20
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
SPECTRAL
REGROWTH
@
400
kHz
(dBc)
40
200
65
60
80
100
VDD = 28 Vdc
IDQ = 1100 mA
f = 1960 MHz
EDGE Modulation
45
40
120
140
160
180
33
5
1930
1940
1950
1960
1970
1980
1990
1930
1940
1950
1960
1970
1980
1990
50 W Avg.
18 W Avg.
TC = 30_C
25
_C
85
_C
85
45
0
Pout, OUTPUT POWER (WATTS)
65
70
75
80
20
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRAL
REGROWTH
@
600
kHz
(dBc)
40
200
60
80
100
VDD = 28 Vdc, IDQ = 1100 mA
f = 1960 MHz, EDGE Modulation
60
55
50
120
140
160
180
ηD
η
D
,DRAIN
EFFICIENCY
(%)
相關(guān)PDF資料
PDF描述
MRF7S19080HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF7S19100NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF7S19100NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF7S19120NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF7S19170HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S18125BHR5 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S18125BHSR3 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S18125BHSR5 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S18170H 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
MRF7S18170HR3 功能描述:射頻MOSFET電源晶體管 1.8GHZ HV7 WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray