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參數(shù)資料
| 型號： | MRF7S16150HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 452K |
| 代理商： | MRF7S16150HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF7S16150HR3 MRF7S16150HSR3
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc)
1560
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance
@ Pout = 32 Watts Avg.
16
0
4
8
12
14
24
23
22
54
30
28
26
24
30
36
42
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
21
20
19
18
17
16
15
1580
1600
1620
1640
1660
1680
1700
22
48
20
IRL
Gps
ACPR
ηD
VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1500 mA,
802.16d, 64 QAM 3
/4, 4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc)
1560
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance
@ Pout = 64 Watts Avg.
16
0
4
8
12
14
24
23
22
45
40
38
36
34
20
25
30
35
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
21
20
19
18
17
16
15
1580
1600
1620
1640
1660
1680
1700
32
40
20
IRL
Gps
ACPR
ηD
VDD = 28 Vdc, Pout = 64 W (Avg.), IDQ = 1500 mA
802.16d, 64 QAM 3
/4, 4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
Figure 5. Two-Tone Power Gain versus
Output Power
100
16
21
1
IDQ = 2250 mA
1875 mA
Pout, OUTPUT POWER (WATTS) PEP
750 mA
1500 mA
19
18
17
10
400
G
ps
,POWER
GAIN
(dB)
20
1125 mA
VDD = 28 Vdc, IDQ = 1500 mA
f1 = 1625 MHz, f2 = 1635 MHz
TwoTone Measurements, 10 MHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
0
IDQ = 375 mA
Pout, OUTPUT POWER (WATTS) PEP
562.5 mA
750 mA
1500 mA
10
20
30
40
100
60
50
1
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
400
10
937.5 mA
VDD = 28 Vdc, IDQ = 1500 mA
f1 = 1625 MHz, f2 = 1635 MHz
TwoTone Measurements, 10 MHz Tone Spacing
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S16150HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S18125AHR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S18125AHR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S18125AHSR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF7S18125AHSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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