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參數(shù)資料
| 型號： | MRF7S16150HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 452K |
| 代理商： | MRF7S16150HSR3 |
MRF7S16150HR3 MRF7S16150HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 32 W Avg.,
f = 1600 MHz and f = 1660 MHz, WiMAX Signal, OFDM Single-Carrier, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @
0.01% Probability on CCDF.
Mask System Type G @ Pout = 32 W Avg.
Point B at 3.5 MHz Offset
Point C at 5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
Point F at 17.5 MHz Offset
Mask
—
-27
-36
-41
-59
-62
—
dBc
Relative Constellation Error @ Pout = 32 W Avg. (1)
RCE
—
-29.6
—
dB
Error Vector Magnitude (1)
(Typical EVM Performance @ Pout = 32 W Avg. with OFDM 802.16d
Signal Call)
EVM
—
3.3
—
% rms
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, 1600-1660 MHz Bandwidth
Video Bandwidth @ 180 W PEP Pout where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
—
20
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 32 W Avg.
GF
—
0.292
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 150 W CW
Φ
—
82.71
—
°
Average Group Delay @ Pout = 150 W CW, f = 1630 MHz
Delay
—
7.19
—
ns
Part-to-Part Insertion Phase Variation @ Pout = 150 W CW,
f = 1630 MHz, Six Sigma Window
ΔΦ
—
22.38
—
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.01387
—
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
—
0.409
—
dBm/°C
1. RCE = 20Log(EVM/100)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S16150HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S18125AHR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S18125AHR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S18125AHSR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF7S18125AHSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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