- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98040 > MRF7S15100HSR3 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF7S15100HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 7/13頁 |
| 文件大小： | 234K |
| 代理商： | MRF7S15100HSR3 |
MRF7S15100HR3 MRF7S15100HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, 1470-1510 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
100
—
W
IMD Symmetry @ 90 W PEP, Pout where IMD Third Order
Intermodulation
` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
40
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
70
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 23 W Avg.
GF
—
0.2
—
dB
Average Deviation from Linear Phase in 40 MHz Bandwidth
@ Pout = 100 W CW
Φ
—
4.5
—
°
Average Group Delay @ Pout = 100 W CW, f = 1490 MHz
Delay
—
1.9
—
ns
Part-to-Part Insertion Phase Variation @ Pout = 100 W CW,
f = 1490 MHz, Six Sigma Window
ΔΦ
—
23
—
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.010
—
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
—
0.007
—
W/°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF7S15100HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S16150HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S16150HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S18125BHR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S19080HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S15100HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V23W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S16150HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S16150HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S16150HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S16150HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。