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參數(shù)資料
| 型號(hào)： | MRF7S15100HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁(yè)數(shù)： | 11/13頁(yè) |
| 文件大?。?/td> | 234K |
| 代理商： | MRF7S15100HSR3 |
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MRF7S15100HR3 MRF7S15100HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single-Carrier W-CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
25
32
10
22
0
90
75
60
45
30
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
20
18
10
100
200
15
60
ACPR
(dBc)
16
14
12
18
39
46
53
Figure 8. Broadband Frequency Response
0
25
1150
f, FREQUENCY (MHz)
VDD = 28 Vdc
IDQ = 600 mA
15
10
1250
S21
(dB)
20
S21
1350 1450 1550 1650 1750 1850
2250
S11
25
0
5
10
15
20
S1
1(dB)
5
TC = 30_C
Gps
ηD
VDD = 28 Vdc, IDQ = 600 mA, f = 1490 MHz
SingleCarrier WCDMA, 3.84 MHz
Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
30
_C
ACPR
25
_C
85
_C
85
_C
25
_C
85
_C
25
_C
1950 2050 2150
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 23 W Avg., and ηD = 32%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
107
105
110
130
150
170
190
MTTF
(HOURS)
210
230
106
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S15100HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V23W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S16150HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S16150HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S16150HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S16150HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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