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參數資料
| 型號： | MRF7P20040HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件頁數： | 9/16頁 |
| 文件大?。?/td> | 488K |
| 代理商： | MRF7P20040HSR3 |
2
RF Device Data
Freescale Semiconductor
MRF7P20040HR3 MRF7P20040HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =32 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
On Characteristics (1)
Gate Threshold Voltage
(VDS =10 Vdc, ID = 33.5 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD =32 Vdc, IDA = 150 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.5
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID = 0.325 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Functional Tests (2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =32 Vdc, IDQA = 150 mA, VGSB =1.5 Vdc, Pout =10 W Avg.,
f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
16
18.2
21
dB
Drain Efficiency
ηD
39
42.6
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.9
7.3
—
dB
Adjacent Channel Power Ratio
ACPR
—
--34.8
--30
dBc
Input Return Loss
IRL
—
--17.8
--10
dB
Typical Performance (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =32 Vdc, IDQA = 150 mA, VGSB =1.5 Vdc,
2010--2025 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
35
—
W
Pout @ 3 dB Compression Point, CW (4)
P3dB
—
50
—
W
IMD Symmetry @ 15 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
8
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
70
—
MHz
Gain Flatness in 15 MHz Bandwidth @ Pout =10 W Avg.
GF
—
0.04
—
dB
Gain Variation over Temperature
(--30°Cto+85°C)
G
—
0.013
—
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C) (4)
P1dB
—
0.006
—
dB/°C
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a Symmetrical Doherty configuration.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
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相關代理商/技術參數 |
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| MRF7P20040HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2GHZ 40W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S15100HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V 23W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S15100HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S15100HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V 23W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S15100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V23W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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