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參數(shù)資料
| 型號： | MRF6V4300NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB, 4 PIN |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 816K |
| 代理商： | MRF6V4300NR1 |
MRF6V4300NR1 MRF6V4300NBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
1
100
1
TC =25°C
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I D
,DRA
IN
CURRE
NT
(A
M
PS
)
40
0
10
0
DRAIN VOLTAGE (VOLTS)
9
8
7
6
20
120
Figure 6. DC Drain Current versus Drain Voltage
I D
,DRA
IN
CURRE
NT
(A
M
PS
)
60
600
18
23
IDQ = 1350 mA
10
22
21
20
Pout, OUTPUT POWER (WATTS) CW
Figure 7. CW Power Gain versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
VDD =50 Vdc
f = 450 MHz
100
10
40
100
5
VGS =3 V
Coss
Crss
80
100
4
3
2
1
2.75 V
2.63 V
2.5 V
2.25 V
19
100
1125 mA
900 mA
450 mA
100
--55
--15
10
Pout, OUTPUT POWER (WATTS) PEP
--25
--30
--35
--40
600
Figure 8. Third Order Intermodulation Distortion
versus Output Power
IM
D,
TH
IRD
O
RDE
R
INT
ER
M
O
DULA
TIO
N
DI
ST
OR
TION
(d
Bc)
VDD = 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz
Two--Tone Measurements, 100 kHz Tone Spacing
--45
--50
--20
IDQ = 450 mA
1350 mA
900 mA
650 mA
1125 mA
38
50
60
28
31
29
58
56
54
52
Pin, INPUT POWER (dBm)
Figure 9. CW Output Power versus Input Power
P out
,O
UT
PU
T
POWER
(d
Bm)
30
34
P3dB = 56.06 dBm (403 W)
Actual
Ideal
P1dB = 55.15 dBm (327 W)
VDD =50 Vdc,IDQ = 900 mA
f = 450 MHz
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
650 mA
--60
--10
--5
0
59
57
55
53
51
33
32
35
36
37
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V4300NR1_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF6V4300NR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP11KGHSR5 | 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS |
| MRF6VP11KGHSR6 | 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS |
| MRF6VP11KGSR5 | 功能描述:射頻雙極電源晶體管 VHV6 130MHZ 1000W NI1230 RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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