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參數(shù)資料
| 型號： | MRF6V3090NBR5 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4 |
| 文件頁數(shù)： | 10/17頁 |
| 文件大?。?/td> | 928K |
| 代理商： | MRF6V3090NBR5 |
2
RF Device Data
Freescale Semiconductor
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
0.5
μAdc
Drain--Source Breakdown Voltage
(ID =50 mA, VGS =0 Vdc)
V(BR)DSS
115
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0 Vdc)
IDSS
—
20
μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 200 μAdc)
VGS(th)
0.9
1.6
2.4
Vdc
Gate Quiescent Voltage
(VDD =50 Vdc, ID = 350 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.5
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =0.5 Adc)
VDS(on)
—
0.2
—
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
41
—
pF
Output Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
65.4
—
pF
Input Capacitance (1)
(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
591
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 350 mA, Pout = 18 W Avg., f = 860 MHz, DVB--T OFDM
Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset @ 4 kHz Bandwidth.
Power Gain
Gps
21.0
22.0
24.0
dB
Drain Efficiency
ηD
27.5
28.5
—
%
Adjacent Channel Power Ratio
ACPR
—
--62.0
--60.0
dBc
Input Return Loss
IRL
—
--14
--9
dB
1. Part internally input matched.
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