參數(shù)資料
型號: MRF6V2150NR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝: ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB, 4 PIN
文件頁數(shù): 14/18頁
文件大?。?/td> 1492K
代理商: MRF6V2150NR1
MRF6V2150NR1 MRF6V2150NBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
1
100
1
TC =25°C
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I D
,DRA
IN
CURRE
NT
(A
M
PS
)
40
5
0
DRAIN VOLTAGE (VOLTS)
20
120
Figure 6. DC Drain Current versus Drain Voltage
I D
,DRA
IN
CURRE
NT
(A
M
PS
)
60
21
25
1
23
22
26
Pout, OUTPUT POWER (WATTS) CW
Figure 7. CW Power Gain versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
VDD =50 Vdc
f = 220 MHz
100
10
40
100
24
VGS =3 V
Coss
Crss
80
100
2.75 V
2.63 V
2.5 V
2.25 V
27
100
--60
--10
5
Pout, OUTPUT POWER (WATTS) PEP
--25
--30
--35
--40
10
100
Figure 8. Third Order Intermodulation Distortion
versus Output Power
IM
D,
TH
IRD
O
RDE
R
INT
ER
M
O
DULA
TIO
N
DI
ST
OR
TION
(d
Bc)
VDD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz
Two--Tone Measurements, 100 kHz Tone Spacing
--45
--50
32
48
58
22
26
24
56
54
52
50
Pin, INPUT POWER (dBm)
Figure 9. CW Output Power versus Input Power
P out
,O
UT
PU
T
POWER
(d
Bm)
28
30
P3dB = 52.61 dBm (182.39 W)
Actual
Ideal
P1dB = 52.27 dBm (168.66 W)
VDD =50 Vdc,IDQ = 450 mA
f = 220 MHz
200
3
2
1
0
10
200
563 mA
IDQ = 675 mA
IDQ = 225 mA
336 mA
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
4
450 mA
337 mA
225 mA
--55
--15
--20
450 mA
563 mA
685 mA
900 mA
300
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