參數(shù)資料
型號(hào): MRF6S9130HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件頁(yè)數(shù): 11/12頁(yè)
文件大?。?/td> 486K
代理商: MRF6S9130HSR3
8
RF Device Data
Freescale Semiconductor
MRF6S9130HR3 MRF6S9130HSR3
TYPICAL CHARACTERISTICS
210
109
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
MTTF
FACT
OR
(HOURS
X
AMPS
2 )
90
110
130
150
170
190
Figure 12. MTTF Factor versus Junction Temperature
100
120
140
160
180
200
N-CDMA TEST SIGNAL
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 13. Single-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
24
6
8
IS95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @
±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY
(%)
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60
110
10
(dB)
20
30
40
50
70
80
90
100
+ACPR in 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.9
0.7
2.2
1.5
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 14. Single-Carrier N-CDMA Spectrum
ACPR in 30 kHz
Integrated BW
ALT1 in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
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