參數(shù)資料
型號(hào)： MRF6S9125NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN
文件頁數(shù)： 18/20頁
文件大?。?/td> 859K
代理商： MRF6S9125NR1
MRF6S9125NR1 MRF6S9125NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
10
70
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
5th Order
3rd Order
20
30
40
1
300
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
50
60
100
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
60
10
0.1
7th Order
TWO TONE SPACING (MHz)
VDD = 28 Vdc, Pout = 125 W (PEP)
IDQ = 950 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
5th Order
20
30
40
50
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
Figure 9. Pulse CW Output Power versus
Input Power
36
56
29
P3dB = 52.4 dBm (172.5 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 950 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 880 MHz
54
52
50
48
30
32
31
34
33
35
Actual
Ideal
55
53
49
51
28
P
out
,OUTPUT
POWER
(dBm)
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
080
Pout, OUTPUT POWER (WATTS) AVG.
50
30
40
30
50
20
60
10
0.1
10
70
ALT1
ηD
Gps
TC = 30_C
85
_C
ACPR
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc, IDQ = 950 mA
f = 880 MHz, NCDMA IS95 (Pilot
Sync, Paging, Traffic Codes 8
Through 13)
AL
T1,
CHANNEL
POWER
(dBc)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
3rd Order
30
_C
P1dB = 51.5 dBm (139.3 W)
1
100
200
25
_C
85
_C
25
_C
30
_C
25
_C
25
_C
85
_C
VDD = 28 Vdc, IDQ = 950 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two Tone Measurements
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