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參數(shù)資料
| 型號： | MRF6S9125NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN |
| 文件頁數(shù)： | 17/20頁 |
| 文件大小： | 859K |
| 代理商： | MRF6S9125NR1 |
6
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
25
20
910
850
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout = 27 Watts Avg.
890
880
870
860
18.5
20.5
20.3
70
34
32
30
40
50
60
η
D
,DRAIN
EFFICIENCY
(%)
20
19.8
19.5
19.3
19
30
900
ALT1
15
10
5
VDD = 28 Vdc, Pout = 27 W (Avg.)
IDQ = 950 mA, NCDMA IS95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
25
20
910
850
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout = 62.5 Watts Avg.
900
890
880
870
860
18
19.6
19.4
70
52
48
44
40
50
60
η
D
,DRAIN
EFFICIENCY
(%)
19.2
19
18.8
18.6
18.4
30
15
10
5
VDD = 28 Vdc, Pout = 62.5 W (Avg.)
IDQ = 950 mA, NCDMA IS95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
Figure 5. Two-Tone Power Gain versus
Output Power
100
16
22
IDQ = 1475 mA
Pout, OUTPUT POWER (WATTS) PEP
20
18
10
G
ps
,POWER
GAIN
(dB)
21
19
1187 mA
950 mA
1
300
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two Tone Measurements
Figure 6. Third Order Intermodulation Distortion
versus Output Power
30
10
1
Pout, OUTPUT POWER (WATTS) PEP
10
20
100
60
40
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
50
18.2
40
17
712 mA
475 mA
18.8
28
ηD
ALT1
300
IDQ = 1425 mA
1187 mA
950 mA
712 mA
475 mA
VDD = 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two Tone Measurements
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S9125NR1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S9125NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S9130H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S9130HR3 | 功能描述:MOSFET RF N-CHAN 28V 27W NI-780 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S9130HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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