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參數(shù)資料
| 型號： | MRF6S21140HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 456K |
| 代理商： | MRF6S21140HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
TYPICAL CHARACTERISTICS
IM3
(dBc),
ACPR
(dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
10
0.1
7th Order
TWO TONE SPACING (MHz)
VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1200 mA
Two Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
3rd Order
20
30
40
50
1
100
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
060
Pout, OUTPUT POWER (WATTS) AVG.
35
25
30
20
35
15
40
5
50
1
10
100
45
10
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 2135 MHz, f2 = 2145 MHz
2 Carrier WCDMA, 10 MHz Carrier
Spacing. 3.84 MHz Channel
Bandwidth. PAR = 8.5 dB
@ 0.01% Probability (CCDF)
44
58
P3dB = 52.6 dBm (180 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2140 MHz
56
54
52
50
48
36
34
40
38
42
Actual
Ideal
P1dB = 52 dBm (158.5 W)
57
55
51
53
49
32
1000
12
18
1
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1200 mA
f = 2140 MHz
TC = 30_C
25
_C
30
_C
100
10
17
16
15
14
13
50
40
30
20
10
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
IM3
Gps
TC = 30_C
85
_C
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
η
D
,DRAIN
EFFICIENCY
(%)
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
P
out
,OUTPUT
POWER
(dBm)
ηD
Gps
G
ps
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
VDD = 24 V
250
9
16
0
200
50
12
11
10
100
150
14
13
15
IDQ = 1200 mA
f = 2140 MHz
30
55
ηD
25
_C
30
_C
85
_C
25
_C
30
_C
30
_C
25
_C
85
_C
ACPR
25
_C
85
_C
85
_C
25
_C
85
_C
28 V
32 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S21140HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 LDMOS 30W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21190H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S21190HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.1GHZ 54W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21190HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.1GHZ 54W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21190HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.1GHZ 54W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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