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參數(shù)資料
| 型號(hào)： | MRF6S21140HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 456K |
| 代理商： | MRF6S21140HSR3 |
MRF6S21140HR3 MRF6S21140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
21
12
15
18
G
ps
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
21
12
15
18
2220
2060
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 30 Watts Avg.
2200
2180
2160
2140
2120
2100
2080
15.6
15.5
44
30
28
26
32
36
40
2220
2060
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 60 Watts Avg.
2200
2180
2160
2140
2120
2100
2080
15
14.9
33
42
40
38
24
27
30
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
12
17
1
IDQ = 1800 mA
1500 mA
Pout, OUTPUT POWER (WATTS) PEP
16
15
14
10
400
55
25
1
IDQ = 600 mA
Pout, OUTPUT POWER (WATTS) PEP
1800 mA
100
30
35
40
45
50
60
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two Tone Measurements, 10 MHz Tone Spacing
10
η
D
,DRAIN
EFFICIENCY
(%)
ηD
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
15.4
15.3
15.2
15.1
15
VDD = 28 Vdc, Pout = 30 W (Avg.),
IDQ = 1200 mA, 2Carrier WCDMA,
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth,
PAR = 8.5 dB @ 0.01% Probability (CCDF)
14.8
14.7
14.6
14.5
14.4
VDD = 28 Vdc, Pout = 60 W (Avg.),
IDQ = 1200 mA, 2Carrier WCDMA,
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
13
1200 mA
900 mA
600 mA
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two Tone Measurements, 10 MHz Tone Spacing
20
1500 mA
900 mA
1200 mA
400
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S21140HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 LDMOS 30W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21190H | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S21190HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.1GHZ 54W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21190HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.1GHZ 54W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21190HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.1GHZ 54W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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