- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359218 > MRF6S18100NBR1 (飛思卡爾半導(dǎo)體(中國)有限公司) RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs PDF資料下載
參數(shù)資料
| 型號： | MRF6S18100NBR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場效應(yīng)晶體管N溝道增強型MOSFET的外側(cè) |
| 文件頁數(shù)： | 10/20頁 |
| 文件大?。?/td> | 711K |
| 代理商： | MRF6S18100NBR1 |
10
RF Device Data
Freescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
Figure 16. MRF6S18100NR1(NBR1) Test Circuit Schematic — 1805-1880 MHz
Z9
Z10*
Z11*
Z12*
Z14, Z15
PCB
0.485
″
x 1.000
″
Microstrip
0.080
″
x 0.083
″
Microstrip
0.340
″
x 0.083
″
Microstrip
0.975
″
x 0.083
″
Microstrip
0.960
″
x 0.080
″
Microstrip
Taconic TLX8-0300, 0.030
″
,
ε
r
= 2.55
*Variable for tuning.
Z1, Z13
Z2*
Z3*
Z4*
Z5
Z6
Z7, Z8
0.250
″
x 0.083
″
Microstrip
0.620
″
x 0.083
″
Microstrip
0.715
″
x 0.083
″
Microstrip
0.190
″
x 0.083
″
Microstrip
0.365
″
x 1.000
″
Microstrip
1.190
″
x 0.080
″
Microstrip
0.115
″
x 1.000
″
Microstrip
V
BIAS
V
SUPPLY
RF
OUTPUT
RF
INPUT
DUT
C1
C2
C3
C4
C5
R1
Z1
Z2
Z3
C6
Z8
R2
Z6
R3
Z7
Z14
Z15
V
SUPPLY
C14
C15
C16
C7
C8
Z4
Z5
Z9
C13
Z10
Z12
Z13
C17
+
C10
C12
Z11
C11
C9
Table 7. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values — 1805-1880 MHz
Part
Description
C1
100 nF Chip Capacitor (1206)
C2, C3, C6, C13, C14
8.2 pF 600B Chip Capacitors
C4, C5, C15, C16
4.7
μ
F Chip Capacitors (1812)
C7, C8, C11, C12
0.2 pF 700B Chip Capacitors
C9
1 pF 600B Chip Capacitor
C10
0.5 pF 600B Chip Capacitor
C17
470
μ
F, 63 V Electrolytic Capacitor, Radial
R1, R2
10 k
Ω
, 1/4 W Chip Resistor (1206)
R3
10
Ω
, 1/4 W Chip Resistor (1206)
Part Number
Manufacturer
AVX
ATC
TDK
ATC
ATC
ATC
Philips
1206C104KAT
600B8R2BW
C4532X5R1H475MT
700B0R2BW
600B1R0BW
600B0R5BW
13661471
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6S18140HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19060NBR1 | RF Power Field Effect Transistors |
| MRF6S19100HR3 | RF Power Field Effect Transistors |
| MRF6S19140HR3 | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19140HSR3 | N-Channel Enhancement-Mode Lateral MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S18100NR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S18100NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18140HR3 | 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S18140HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18140HR5 | 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。