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參數(shù)資料
| 型號： | MRF6P27160HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 487K |
| 代理商： | MRF6P27160HR6 |
6
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
10
0.1
7th Order
TWOTONE SPACING (MHz)
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1800 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2645 MHz
5th Order
3rd Order
20
30
40
50
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
Figure 8. Pulsed CW Output Power versus
Input Power
42
58
P3dB = 54.32 dBm (270.33 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1800 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2645 MHz
56
54
52
50
36
38
40
Actual
Ideal
P1dB = 53.64 dBm (231.15 W)
57
34
P
out
,OUTPUT
POWER
(dBm)
ACPR
(dBc),
AL
T1
(dBc)
Figure 9. Single-Carrier N-CDMA ACPR,
ALT1, Power Gain and Drain Efficiency
versus Output Power
0
70
Pout, OUTPUT POWER (WATTS) AVG. WCDMA
35
25
20
45
15
50
5
60
1
10
100
55
10
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
65
ηD
Gps
400
5
20
0
50
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1800 mA
f = 2645 MHz
10
15
5
30
20
10
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD = 24 V
G
ps
,POWER
GAIN
(dB)
300
10
16
60
15
11
120
12
14
32 V
IDQ = 1800 mA
f = 2645 MHz
0
55
53
51
35
37
39
41
30
40
ALT1
VDD = 28 Vdc, IDQ = 1800 mA, f = 2645 MHz
SingleCarrier NCDMA, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB @ 0.01%
Probability (CCDF)
0
40
13
180
240
ACPR
0.1
1
100
10
28 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P27160HR6_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P3300H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P3300HR3 | 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P3300HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P3300HR5 | 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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