參數(shù)資料
型號(hào)： MRF6P27160HR6
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 487K
代理商： MRF6P27160HR6
10
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Dec. 2008
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table; related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
Changed “Z2, Z31” to “Z2, Z30” and “Z3, Z30” to “Z3, Z31” in Z list for Fig. 1, Test Circuit Schematic, p. 3
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
Adjusted scale for Fig. 5, Two-Tone Power Gain versus Output Power, to better match the device’s
capabilities, p. 5
Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
Replaced Fig. 12, MTTF versus Junction Temperature, with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
Added Product Documentation and Revision History, p. 10
相關(guān)PDF資料
PDF描述
MRF6P3300HR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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MRF6S18060MR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6P27160HR6_06 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P3300H 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P3300HR3 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6P3300HR3_06 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P3300HR5 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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