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參數(shù)資料
| 型號： | MRF6P27160H |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 497K |
| 代理商： | MRF6P27160H |
MRF6P27160HR6
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
10
10
10
9
10
8
10
7
110
130
150
170
190
90
100
120
140
160
180
200
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
±
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
M
2
)
N-CDMA TEST SIGNAL
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 13. Single-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2
4
6
8
P
IS95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±
885
kHz Offset. ALT1 Measured in 12.5 kHz
Bandwidth @
±
1.25 M
Hz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
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. .
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.
.
. ...
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. ......
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......
. .
. ..
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...
............
.
.
.
..
.......
..
.
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.
.
.
.
..
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.
.....
..
.
ACPR in 30 kHz
Integrated BW
......
.
60
110
10
(
20
30
40
50
70
80
90
100
+ACPR in 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.9
0.7
2.2
1.5
0
0.7
1.5
2.2
2.9
3.6
3.6
f, FREQUENCY (MHz)
Figure 14. Single-Carrier N-CDMA Spectrum
ALT1 in 12.5 kHz
Integrated BW
+ALT1 in 12.5 kHz
Integrated BW
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P27160HR6 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P27160HR6_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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