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參數(shù)資料
| 型號： | MRF6P27160H |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 497K |
| 代理商： | MRF6P27160H |
MRF6P27160HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
2700
2600
2690
2680
2670
2660
2650
2620
2610
2630 2640
15
11
12
13
14
16
14
10
11
12
13
15
I
A
G
p
,
G
p
,
I
A
2700
2600
G
ps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ P
out
= 35 Watts Avg.
2690
2680
2670
2660
2650
2620
2610
16
15.8
65
24
22
40
50
55
IRL
G
ps
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ P
out
= 70 Watts Avg.
15.2
15.1
60
35
31
30
35
45
55
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
12
17
0.1
I
DQ
= 2700 mA
2250 mA
P
out
, OUTPUT POWER (WATTS) PEP
16
15
14
10
1000
30
1
I
DQ
= 900 mA
P
out
, OUTPUT POWER (WATTS) PEP
100
40
50
60
10
η
D
,
E
η
D
η
D
,
E
G
p
,
I
I
15.4
15
14.6
14.2
14
V
DD
= 28 Vdc, P
out
= 35 W (Avg.),
I
DQ
= 1800 mA, NCDMA IS95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
14.9
14.7
14.5
14.3
14.2
14
13
900 mA
20
1800 mA
14.4
14.8
15.2
15.6
60
45
20
15
14.8
14.6
14.4
33
40
50
η
D
ACPR
V
DD
= 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
1350 mA
2630 2640
IRL
ALT1
14.1
10
ALT1
V
DD
= 28 Vdc, P
out
= 70 W (Avg.),
I
DQ
= 1800 mA, NCDMA IS95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
1
1800 mA
1350 mA
0.1
V
DD
= 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
2250 mA
2700 mA
23
21
34
32
30
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P27160HR6 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P27160HR6_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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