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參數(shù)資料
| 型號： | MRF6P21190HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 409K |
| 代理商： | MRF6P21190HR6 |
MRF6P21190HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
30
10
15
20
25
2220
2080
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 44 Watts Avg.
VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 1900 mA
2Carrier WCDMA, 10 MHz Carrier Spacing
2200
2180
2160
2140
2120
2100
4
20
18
16
14
12
10
8
6
50
40
30
20
10
20
30
40
η
D
,DRAIN
EFFICIENCY
(%)
ηD
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
30
10
15
20
25
2220
2080
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 87 Watts Avg.
VDD = 28 Vdc, Pout = 87 W (Avg.), IDQ = 1900 mA
2Carrier WCDMA, 10 MHz Carrier Spacing
2200
2180
2160
2140
2120
2100
4
20
18
16
14
12
10
8
6
40
50
40
30
20
0
10
20
30
η
D
,DRAIN
EFFICIENCY
(%)
ηD
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
Figure 5. Two-Tone Power Gain versus
Output Power
100
14
17
1
IDQ = 2500 mA
2200 mA
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements, 10 MHz Tone Spacing
16.5
16
15.5
10
300
Pout, OUTPUT POWER (WATTS) PEP
G
ps
,POWER
GAIN
(dB)
14.5
15
1900 mA
1600 mA
1300 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
45
30
1
IDQ = 2500 mA
1300 mA
100
35
40
300
55
50
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements, 10 MHz Tone Spacing
10
Pout, OUTPUT POWER (WATTS) PEP
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
2200 mA
1900 mA
1600 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P21190HR6_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P21190HR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P23190H_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P23190HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P23190HR6 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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