參數(shù)資料
型號： MRF6P21190HR6
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN
文件頁數(shù)： 10/11頁
文件大?。?/td> 409K
代理商： MRF6P21190HR6
8
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
2000
2110
2140
3.43 - j10.06
3.39 - j6.07
3.22 - j7.13
5.63 - j12.88
4.36 - j10.02
4.56 - j8.49
VDD = 28 Vdc, IDQ = 1900 mA, Pout = 44 W Avg.
Zo = 25 Ω
Zload
f = 2200 MHz
f = 2000 MHz
Zsource
2170
2200
3.69 - j5.16
3.76 - j5.45
5.11 - j7.41
5.42 - j6.67
f = 2000 MHz
f = 2200 MHz
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
+
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6P21190HR6_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P21190HR6_10 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190H_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190HR5 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6P23190HR6 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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