參數(shù)資料
型號(hào): MRF5S9101NBR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝: ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN
文件頁數(shù): 19/20頁
文件大?。?/td> 544K
代理商: MRF5S9101NBR1
8
RF Device Data
Freescale Semiconductor
MRF5S9101NR1 MRF5S9101NBR1
TYPICAL CHARACTERISTICS - 900 MHz
90
85
65
0
TC = 85_C
Pout, OUTPUT POWER (WATTS) AVG.
Figure 12. Spectral Regrowth @ 600 kHz
versus Output Power
SPECTRAL
REGROWTH
@
600
kHz
(dBc)
25
_C
30
_C
70
75
80
10
20
30
40
50
60
70
80
VDD = 28 Vdc
IDQ = 650 mA
f = 940 MHz
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
210
1.E+07
1.E+10
90
MTTF
FACT
OR
(HOURS
X
AMPS
2 )
1.E+09
1.E+08
100 110 120 130 140 150 160 170 180 190 200
GSM TEST SIGNAL
Figure 14. EDGE Spectrum
10
20
30
40
50
60
70
80
90
100
200 kHz
Span 2 MHz
Center 1.96 GHz
110
400 kHz
600 kHz
400 kHz
600 kHz
(dB)
Reference Power
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
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