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參數(shù)資料
| 型號： | MRF5S4140HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 16/20頁 |
| 文件大小： | 832K |
| 代理商： | MRF5S4140HSR3 |
MRF5S4140HR3 MRF5S4140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 460-470 MHz
9
1
3
5
7
13
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
490
430
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ Pout = 28 Watts Avg.
480
470
460
450
440
70
38
32
26
40
50
55
η
D
,DRAIN
EFFICIENCY
(%)
ηD
60
45
29
35
21.5
21
20
19
18
17
16
17.5
18.5
19.5
20.5
ALT1
12
2
4
6
10
14
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
490
430
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance
@ Pout = 56 Watts Avg.
480
470
460
450
440
60
55
45
35
45
50
η
D
,DRAIN
EFFICIENCY
(%)
ηD
55
40
50
20.8
20.3
19.3
18.3
17.3
16.3
15.8
16.8
17.8
18.8
19.8
ALT1
Figure 5. Two-Tone Power Gain versus
Output Power
100
17
23
6
IDQ = 1850 mA
1550 mA
Pout, OUTPUT POWER (WATTS) PEP
21
19
10
400
G
ps
,POWER
GAIN
(dB)
650 mA
VDD = 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
950 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
15
IDQ = 650 mA
Pout, OUTPUT POWER (WATTS) PEP
100
20
25
35
45
10
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
10
950 mA
1850 mA
400
1550 mA
VDD = 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
22
20
18
1250 mA
40
1250 mA
16.5
65
11
VDD = 28 Vdc, Pout = 28 W (Avg.)
IDQ = 1250 mA, NCDMA IS95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
8
30
VDD = 28 Vdc, Pout = 56 W (Avg.)
IDQ = 1250 mA, NCDMA IS95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
LIFETIME
BUY
LAST
ORDER
3
OCT
08
LAST
SHIP
14
MA
Y
09
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S4140HSR5 | 功能描述:射頻MOSFET電源晶體管 HV5 450MHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9070MR1 | 功能描述:MOSFET RF N-CH 26V 70W TO-270-2 RoHS:否 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S9070NR1 | 功能描述:射頻MOSFET電源晶體管 70W RF POWER FET TO270 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9070NR5 | 功能描述:射頻MOSFET電源晶體管 70W RF POWER FET TO270 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9080NBR1 | 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 80W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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