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參數(shù)資料
| 型號： | MRF5S21150SR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 382K |
| 代理商： | MRF5S21150SR3 |
AR
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HIVE
INF
O
RMA
TI
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N
ARCHIVE
INFORMA
TION
Fr
eescale
Semiconductor
,Inc.
Freescale Semiconductor, Inc.
MRF5S21150R3 MRF5S21150SR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
TYPICAL CHARACTERISTICS
η
2220
2060
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance
IM3
(dBc),
ACPR
(dBc)
G
ps
,POWER
GAIN
(dB)
,DRAINη
30
10
15
20
25
INPUT
RETURN
LOSS
(dB)
IRL,
VDD = 28 Vdc, Pout = 33 W (Avg.), IDQ = 1300 mA
2Carrier WCDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
2200
2180
2160
2140
2120
2100
2080
5
13
12
11
10
9
8
7
6
44
35
30
25
20
28
32
36
40
Figure 4. Two-Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
EFFICIENCY
(%)
100
10
14
1
IDQ = 1900 mA
1600 mA
Pout, OUTPUT POWER (WATTS) PEP
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
700 mA
1300 mA
1000 mA
13
12
11
10
1000
55
25
1
IDQ = 700 mA
Pout, OUTPUT POWER (WATTS) PEP
IM3,
THIRD
ORDER
INTERMODULA
TION
DIST
ORTION
(dBc)
1600 mA
1300 mA
1000 mA
1900 mA
10
30
35
40
45
50
100
65
60
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
10
60
25
0.1
7th Order
TWOTONE SPACING (MHz)
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1300 mA
TwoTone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
30
35
40
45
50
55
1
100
47
58
36
P3dB = 53.58 dBm (228 W)
Pin, INPUT POWER (dBm)
P out
,
OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 1300 mA
Pulsed CW, 5
sec(on), 1 msec(off)
Center Frequency = 2140 MHz
56
54
52
50
48
37
39
38
41
40
44
42
Actual
Ideal
P1dB = 52.95 dBm (197 W)
57
55
51
53
49
43
45
46
35
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| MRF5S4125NBR1 | 功能描述:射頻MOSFET電源晶體管 HV5 450MHZ RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S4125NR1 | 功能描述:射頻MOSFET電源晶體管 HV5 450MHZ RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S4140HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 450MHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S4140HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 450MHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S4140HSR3 | 功能描述:射頻MOSFET電源晶體管 HV5 450MHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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