參數(shù)資料
型號(hào)： MRF5S21150SR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-880S, CASE 465C-02, 2 PIN
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 382K
代理商： MRF5S21150SR3
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INFORMA
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Fr
eescale
Semiconductor
,Inc.
Freescale Semiconductor, Inc.
MRF5S21150R3 MRF5S21150SR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 360 Adc)
VGS(th)
2.5
—
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1300 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
—
0.26
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3.6 Adc)
gfs
—
9
—
S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
3.2
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Gps
11
12.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
η
23
25
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 -10 MHz and f2 +10 MHz
referenced to carrier channel power.)
IM3
-37
-35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 -5 MHz and f2 +5 MHz.)
ACPR
—
-39
-37
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
IRL
—
-12
-9
dB
(1) Part is internally matched both on input and output.
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