參數(shù)資料
型號(hào): MRF5S21130
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-880, CASE 465B-03, 3 PIN
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 410K
代理商: MRF5S21130
3
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
MOTOROLA RF DEVICE DATA
Figure 1. MRF5S21130 Test Circuit Schematic
Z9, Z10
Z11
Z12
Z13
Z14, Z15
Z16
PCB
0.709
x 0.083
Microstrip
0.415
x 1.000
Microstrip
0.531
x 0.083
Microstrip
0.994
x 0.083
Microstrip
0.070
x 0.220
Microstrip
0.430
x 0.083
Microstrip
Taconic TLX8, 0.76 mm,
ε
r
= 2.55
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
0.500
x 0.083
Microstrip
0.995
x 0.083
Microstrip
0.905
x 0.083
Microstrip
0.159
x 1.024
Microstrip
0.117
x 1.024
Microstrip
0.749
x 0.083
Microstrip
0.117
x 1.000
Microstrip
Table 1. MRF5S21130 Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
293D1106X9035D
1812Y224KXA
100B6R8CW
100B0R1BW
100B0R5BW
13668221
Manufacturer
Vishay–Sprague
Vishay–Vitramon
ATC
ATC
ATC
Philips
C1, C2, C13, C14, C15, C16
C3, C4, C11, C12
C5, C6, C7, C9, C10, C18, C19
C8
C17
C20
R1, R2
10
μ
F, 35 V Tantalum Capacitors
220 nF Chip Capacitors (1812)
6.8 pF 100B Chip Capacitors
0.1 pF 100B Chip Capacitor
0.5 pF 100B Chip Capacitor
220
μ
F, 63 V Electrolytic Capacitor, Radial
1 k , 1/4 W Chip Resistors
相關(guān)PDF資料
PDF描述
MRF5S21130R3 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130S The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130SR3 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21150 RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150S RF POWER FIELD EFFECT TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S21130HR3 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S21130HR5 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S21130HS 制造商:Motorola Inc 功能描述:
MRF5S21130HSR3 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S21130HSR5 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray