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參數(shù)資料
| 型號： | MRF5S21100L |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 204K |
| 代理商： | MRF5S21100L |
MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
6
MOTOROLA RF DEVICE DATA
η
0
40
1
–55
–15
Gps
ACPR
IM3
Pout, OUTPUT POWER (WATTS) AVG. W–CDMA
Figure 8. 2–Carrier W–CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
IM3
(dBc),
ACPR
(dBc)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc, IDQ = 1050 mA
f1 = 2135 MHz, f2 = 2145 MHz
2x W–CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
35
–20
30
–25
25
–30
20
–35
15
–40
10
–45
5
–50
10
Figure 9. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
–110
–120
–70
–20
–80
–60
–50
(dB)
–90
–100
–40
–30
3.84 MHz
Channel BW
–IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
–ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
20
515
10
0
–5
–10
–15
–20
–25
25
10
0.0001
100
0
PEAK–TO–AVERAGE (dB)
Figure 10. CCDF W–CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
PROBABILITY
(%)
10
1
0.1
0.01
0.001
24
6
8
220
109
100
108
107
106
120
140
160
180
200
TJ, JUNCTION TEMPERATURE (_C)
Figure 11. MTBF Factor versus Junction
Temperature
This above graph displays calculated MTBF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTBF factor by ID2 for MTBF in a particular application.
MTBF
FACT
OR
(HOURS
x
AMPS
)
2
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| MRF5S21130HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21100LR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21100LSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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