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參數(shù)資料
| 型號： | MRF5S21045NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大小： | 621K |
| 代理商： | MRF5S21045NR1 |
2
RF Device Data
Freescale Semiconductor
MRF5S21045NR1 MRF5S21045NBR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 120 μAdc)
VGS(th)
2
—
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 500 mAdc)
VGS(Q)
2
3.8
5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1.2 Adc)
VDS(on)
0.2
—
0.35
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1.2 Adc)
gfs
—
3.2
—
S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.9
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg., f1 = 2112.5 MHz, f2 =
2122.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5 MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @
±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13.5
14.5
16.5
dB
Drain Efficiency
ηD
24
25.5
—
%
Intermodulation Distortion
IM3
—
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
—
-39
-37
dBc
Input Return Loss
IRL
—
-12
-9
dB
1. Part is internally matched both on input and output.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21045NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21090HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| MRF5S21090HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF5S21090HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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