參數(shù)資料
型號(hào)： MRF5S21045NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4
文件頁數(shù)： 14/16頁
文件大?。?/td> 621K
代理商： MRF5S21045NR1
MRF5S21045NR1 MRF5S21045NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
106
110
130
160
180
200
MTTF
FACT
OR
(HOURS
x
AMPS
2 )
100
120
140 150
170
190
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK-T O-A VERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24
68
Figure 14. 2‐Carrier W‐CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
-IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
-ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
PROBABILITY
(%)
(dB)
+20
+30
0
-10
-40
-50
-60
-70
-80
-20
20
515
10
0
-5
-10
-15
-2 0
-25
25
-30
W-CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @
$5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @
$10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
相關(guān)PDF資料
PDF描述
MRF5S21045NBR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S21090LR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21100HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21100HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21100HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S21045NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21090HR3 功能描述:射頻MOSFET電源晶體管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S21090HR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF5S21090HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF5S21090HR5 功能描述:射頻MOSFET電源晶體管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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