參數(shù)資料
型號(hào): MRF5S21045NR1
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: RF Power Field Effect Transistors
中文描述: 射頻功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 5/16頁(yè)
文件大?。?/td> 564K
代理商: MRF5S21045NR1
MRF5S21045NR1 MRF5S21045NBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
p
,
G
p
,
I
I
20
8
11
14
17
I
I
22
10
13
16
19
2220
2060
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ P
out
= 10 Watts
2200
2180
2160
2140
2120
2100
2080
13.4
15.2
15
44
32
28
24
20
16
32
36
40
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ P
out
= 20 Watts
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
11
17
1
I
DQ
= 800 mA
650 mA
P
out
, OUTPUT POWER (WATTS) PEP
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements
15
13
12
10
40
10
1
P
out
, OUTPUT POWER (WATTS) PEP
10
20
30
100
60
50
η
D
,
E
η
D
η
D
,
E
G
p
,
I
I
14.8
14.6
14.4
14.2
14
13.8
13.6
28
V
DD
= 28 Vdc, P
out
= 10 W (Avg.), I
DQ
= 500 mA
2Carrier WCDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
2220
2060
2200
2180
2160
2140
2120
2100
2080
13
14.8
34
46
42
38
34
30
22
26
30
14.4
14.2
14
13.8
13.6
13.4
13.2
18
14.6
IRL
G
ps
ACPR
IM3
η
D
V
DD
= 28 Vdc, P
out
= 20 W (Avg.), I
DQ
= 500 mA
2Carrier WCDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
16
14
500 mA
350 mA
200 mA
I
DQ
= 200 mA
650 mA
800 mA
500 mA
350 mA
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements
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參數(shù)描述
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MRF5S21090HR5 功能描述:射頻MOSFET電源晶體管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray