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參數(shù)資料
| 型號： | MRF5S19150R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 428K |
| 代理商： | MRF5S19150R3 |
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
Fr
eescale
Semiconductor
,Inc.
Freescale Semiconductor, Inc.
MRF5S19150R3 MRF5S19150SR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
TYPICAL CHARACTERISTICS
η
2020
5
15
1900
55
40
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance
G
ps
,POWER
GAIN
(dB)
,DRAINη
60
10
20
30
40
INPUT
RETURN
LOSS
(dB)
IRL,
VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1400 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1.228 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
EFFICIENCY
(%)
IM3
(dBc),
ACPR
(dBc)
50
14
35
13
30
12
25
11
20
10
30
9
35
8
40
7
45
6
50
1920
1940
1960
1980
2000
100
11
16
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
10
15
14
13
12
IDQ = 2100 mA
1700 mA
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
1400 mA
700 mA
1050 mA
100
55
15
1
IDQ = 2100 mA
1700 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation versus
Output Power
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
INTERMODULA
TION
DIST
ORTION
(dBc)
IM3,
THIRD
ORDER
10
1400 mA
700 mA
1050 mA
20
25
30
35
40
45
50
10
60
20
0.1
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
3rd Order
VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1400 mA
TwoTone Measurements, Center Frequency = 1960 MHz
5th Order
7th Order
25
30
35
40
45
50
55
1
45
49
59
35
P3dB = 53.71 dBm (234.96 W)
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P out
,
OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 1400 mA
Pulsed CW, 8
sec (on), 1 msec (off)
Center Frequency = 1960 MHz
44
43
42
41
40
39
38
37
36
58
57
56
55
54
53
52
51
50
P1dB = 53.01 dBm (199.99 W)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF5S19150S | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21045MBR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S21045MR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S21045NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S21045NBR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S19150SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21045 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21045MBR1 | 功能描述:MOSFET RF N-CH 28V 10W TO272-4 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21045MR1 | 功能描述:MOSFET RF N-CH 28V 10W TO270-4 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21045NBR1 | 功能描述:射頻MOSFET電源晶體管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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