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參數(shù)資料
| 型號： | MRF426 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | 3 A, 35 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 112K |
| 代理商： | MRF426 |
1
MRF426
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for high gain driver and output linear amplifier stages in 1.5 to
30 MHz HF/SSB equipment.
Specified 28 Volt, 30 MHz Characteristics —
Output Power = 25 W (PEP)
Minimum Gain = 22 dB
Efficiency = 35%
Intermodulation Distortion @ 25 W (PEP) —
IMD = –30 dB (Max)
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Class A and AB Characterization
BLX 13 Equivalent
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
—
35
Vdc
Collector–Base Voltage
65
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
3.0
Adc
Withstand Current — 5 s
6.0
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
PD
70
0.4
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2.5
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 50 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 28 Vdc, VBE = 0)
NOTE:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
35
—
—
Vdc
65
—
—
Vdc
4.0
—
—
Vdc
—
—
10
mAdc
(continued)
Order this document
by MRF426/D
SEMICONDUCTOR TECHNICAL DATA
25 W (PEP), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–07, STYLE 1
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