參數(shù)資料
型號(hào)： MRF4427
廠商： MOTOROLA INC
元件分類(lèi)： 功率晶體管
英文描述： HIGH-FREQUENCY TRANSISTOR NPN SILICON
中文描述： UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 85K
代理商： MRF4427
1
MRF4427R2
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed for amplifier, frequency multiplier, or oscillator applications in
industrial equipment constructed with surface mount components. Suitable for
use as output driver or pre–driver stages in VHF and UHF equipment.
Low Cost SORF Plastic Surface Mount Package
Guaranteed RF Specification — |S21|2
S–Parameter Characterization
Low Voltage Version of MRF3866
Tape and Reel Packaging Available.
R2 suffix = 2,500 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
20
Vdc
Collector–Base Voltage
40
Vdc
Emitter–Base Voltage
2.0
Vdc
Collector Current — Continuous
400
mAdc
Total Device Dissipation @ TC = 75
°
C
Derate above 75
°
C
1.67
22.2
Watts
mW/
°
C
Operating Junction and Storage Temperature Range
TJ, Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
45
°
C/W
DEVICE MARKING
MRF4427 = 4427
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
Emitter–Base Breakdown Voltage (IE = 100
μ
Adc)
Collector Cutoff Current (VCE = 12 Vdc, IB = 0)
NOTE:
1.Case temperature measured on collector lead immediately adjacent to body of package.
V(BR)CEO
20
—
—
Vdc
V(BR)CER
40
—
—
Vdc
V(BR)EBO
ICEO
2.0
—
—
Vdc
—
—
20
μ
Adc
(continued)
Order this document
by MRF4427/D
SEMICONDUCTOR TECHNICAL DATA
1.0 W, 175 MHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 751–05, STYLE 1
SORF
(SO–8)
REV 8
相關(guān)PDF資料
PDF描述
MRF4427R1 Inductor; Inductor Type:Power; Inductance:10uH; Inductance Tolerance:+/- 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:2.89A; Current, lt rms Series:1.45A RoHS Compliant: Yes
MRF4427R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF448 RF POWER TRANSISTOR NPN SILICON
MRF453 RF POWER TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF4427G 制造商:Microsemi Corporation 功能描述:MRF4427G - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT
MRF4427GR1 制造商:Microsemi Corporation 功能描述:MRF4427GR1 - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT 制造商:Microsemi 功能描述:General purpose Small Signal
MRF4427GR2 制造商:Microsemi Corporation 功能描述:MRF4427GR2 - Bulk
MRF4427R1 制造商:Microsemi Corporation 功能描述:MRF4427R1 - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT
MRF4427R2 制造商:Microsemi Corporation 功能描述:MRF4427R2 - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*