- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359217 > MRF377R5 (Motorola, Inc.) Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount with flange, 10 Vdc excitation PDF資料下載
參數(shù)資料
| 型號： | MRF377R5 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount with flange, 10 Vdc excitation |
| 中文描述： | 射頻功率場效應晶體管 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 780K |
| 代理商： | MRF377R5 |
10
RF Device Data
Freescale Semiconductor
MRF377HR3 MRF377HR5
TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS
η
900
8
18
420
45
45
G
ps
f, FREQUENCY (MHz)
Figure 14. Single-Channel ATSC 8VSB
Broadband Performance
Gp
V
DD
= 32 Vdc
P
out
= 80 W (Avg.)
I
DQ
= 2000 mA
ATSC 8VSB
,
η
A
17
40
16
35
15
30
14
25
13
15
12
20
11
25
10
30
9
35
480
540
600
660
720
780
840
ACPR
100
16
19
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 15. Single-Channel ATSC 8VSB Broadband
Performance Power Gain versus Output Power
Gp
V
DD
= 32 Vdc
I
DQ
= 2000 mA
ATSC 8VSB
470 MHz
660 MHz
560 MHz
860 MHz
760 MHz
18.5
18
17.5
17
16.5
10
100
0
40
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 16. Single-Channel ATSC 8VSB Broadband
Performance Drain Efficiency versus Output Power
,
η
470 MHz
V
DD
= 32 Vdc
I
DQ
= 2000 mA
ATSC 8VSB
660 MHz
560 MHz
860 MHz
760 MHz
35
30
25
20
15
10
5
10
100
50
25
10
860 MHz
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 17. Single-Channel ATSC 8VSB Broadband Performance
Adjacent Channel Power Ratio versus Output Power
A
V
DD
= 32 Vdc
I
DQ
= 2000 mA
ATSC 8VSB
560 MHz
760 MHz
660 MHz
470 MHz
30
35
40
45
IMRU
4.0
100
10
0
IMRL
f, FREQUENCY (MHz)
Figure 18. ATSC 8VSB Spectrum
Reference
Point
20
30
40
50
60
70
80
90
0.8
0.8
1.6
2.4
3.2
4.0 3.2
2.4 1.6
3.25 MHz
Offset
3.25 MHz
Offset
(
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF377R3 | Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount, 10 Vdc excitation |
| MRF377HR5 | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF421 | TRI GASKET FLG 24 BULK/100 |
| MRF421 | RF POWER TRANSISTORS NPN SILICON |
| MRF422 | The RF Line NPN Silicon RF Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF3866 | 功能描述:射頻雙極小信號晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MRF3866G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF3866R1 | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF3866R2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF390 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。