參數(shù)資料
型號: MRF377
廠商: Motorola, Inc.
英文描述: RF POWER FIELD EFFECT TRANSISTOR
中文描述: 射頻功率場效應晶體管
文件頁數(shù): 6/16頁
文件大?。?/td> 780K
代理商: MRF377
6
RF Device Data
Freescale Semiconductor
MRF377HR3 MRF377HR5
f
MHz
Z
source
Z
load
845
860
875
4.66 - j5.90
3.93 - j5.33
4.38 - j5.64
8.59 - j4.22
9.36 - j4.95
9.39 - j6.06
V
DD
= 32 V, I
DQ
= 2 x 1000 mA, P
out
= 45 W Avg., DVBT OFDM
Z
source
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
Z
load
=
Test circuit impedance as measured
from drain to drain, balanced configuration.
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
+
+
Figure 7. 845-875 MHz Narrowband Series Equivalent Source and Load Impedance
Z
o
= 10
f = 845 MHz
f = 875 MHz
f = 845 MHz
f = 875 MHz
Z
load
Z
source
相關PDF資料
PDF描述
MRF377R5 Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount with flange, 10 Vdc excitation
MRF377R3 Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount, 10 Vdc excitation
MRF377HR5 N-Channel Enhancement-Mode Lateral MOSFETs
MRF421 TRI GASKET FLG 24 BULK/100
MRF421 RF POWER TRANSISTORS NPN SILICON
相關代理商/技術參數(shù)
參數(shù)描述
MRF377HR3 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF377HR3_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF377HR5 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF377R3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
MRF377R5 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR