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參數(shù)資料
| 型號： | MRF374A |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTOR |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-650, CASE 375F-04, 5 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 783K |
| 代理商： | MRF374A |
MRF374A
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=10
μ
A)
V
(BR)DSS
70
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 200
μ
A)
V
GS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(V
DS
= 32 V, I
D
= 100 mA)
V
GS(Q)
2.5
3.3
4.5
Vdc
Drain–Source On–Voltage
(V
GS
= 10 V, I
D
= 3 A)
V
DS(on)
—
0.41
0.45
Vdc
DYNAMIC CHARACTERISTICS
(1)
Input Capacitance
(V
DS
= 32 V, V
GS
= 0 V, f = 1 MHz)
C
iss
—
97.3
—
pF
Output Capacitance
(V
DS
= 32 V, V
GS
= 0 V, f = 1 MHz)
C
oss
—
49
—
pF
Reverse Transfer Capacitance
(V
DS
= 32 V, V
GS
= 0 V, f = 1 MHz)
C
rss
—
1.91
—
pF
FUNCTIONAL CHARACTERISTICS, NARROWBAND OPERATION
(In Motorola MRF374A Narrowband Circuit, 50 ohm system)
(2)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 130 W PEP, I
DQ
= 2 x 200 mA,
f1 = 857 MHz, f2 = 863 MHz)
G
ps
16
17.3
—
dB
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 130 W PEP, I
DQ
= 2 x 200 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
36
41.2
—
%
Intermodulation Distortion
(V
DD
= 32 Vdc, P
out
= 130 W PEP, I
DQ
= 2 x 200 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
–32.5
–28
dB
Load Mismatch
(V
DD
= 32 Vdc, P
out
= 130 W Two–Tone, I
DQ
= 2 x 200 mA,
f1 = 857 MHz, f2 = 863 MHz, VSWR 10:1 at All Phase Angles
of Test)
No Degradation in Output Power
TYPICAL CHARACTERISTICS, BROADBAND OPERATION
(In Motorola MRF374 Broadband Circuit, 50 ohm system)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 100 W PEP, I
DQ
= 750 mA,
f1 = 857 MHz, f2 = 863 MHz)
G
ps
—
15.8
—
dB
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 100 W PEP, I
DQ
= 750 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
—
35
—
%
Intermodulation Distortion
(V
DD
= 32 Vdc, P
out
= 100 W PEP, I
DQ
= 750 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
34.5
—
dB
(1) Each side of device measured separately.
(2) Measured in push–pull configuration.
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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|---|---|
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