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參數(shù)資料
| 型號： | MRF3866 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, M240, SO-8 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 59K |
| 代理商： | MRF3866 |
1
MRF3866R2
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Tape and reel packaging available for MRF3866R2:
R2 suffix = 2,500 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
30
Vdc
Collector–Base Voltage
55
Vdc
Emitter–Base Voltage
3.5
Vdc
Collector Current — Continuous
0.4
Adc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
Maximum Junction Temperature
TJmax
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
83.3
°
C/W
Thermal Resistance, Junction to Ambient
125
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10
)
V(BR)CER
55
—
Vdc
Collector–Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
VCEO(sus)
30
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100
μ
Adc, IC = 0)
V(BR)EBO
3.5
—
Vdc
Collector Cutoff Current
(VCE = 28 Vdc, IB = 0)
ICEO
—
0.02
mAdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = –1.5 Vdc (Rev.), TC = 150
°
C)
(VCE = 55 Vdc, VBE = –1.5 Vdc (Rev.)
ICEX
—
—
5.0
0.1
mAdc
Emitter Cutoff Current
(VBE = 3.5 Vdc, IC = 0)
IEBO
—
0.1
mAdc
(continued)
Order this document
by MRF3866/D
SEMICONDUCTOR TECHNICAL DATA
IC = 400 mA
HIGH–FREQUENCY
TRANSISTORS
NPN SILICON
CASE 751–05, STYLE 1
(SO–8)
(Replaces MPS3866/D)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF3866G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF3866R1 | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF3866R2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF390 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF392 | 功能描述:射頻雙極電源晶體管 100-400MHz 125Watts 28Volt Gain 10dB RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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