參數(shù)資料
型號: MRF373ALSR1
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF Power Field Effect Transistors
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-360S, CASE 360C-05, 2 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 481K
代理商: MRF373ALSR1
MRF373ALR1 MRF373ALSR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=1
μ
A)
V
(BR)DSS
70
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
I
DSS
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 200
μ
A)
V
GS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(V
DS
= 32 V, I
D
= 100 mA)
V
GS(Q)
2.5
3.3
4.5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 V, I
D
= 3 A)
V
DS(on)
0.41
0.45
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
C
iss
98.5
pF
Output Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
C
oss
49
pF
Reverse Transfer Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
C
rss
2
pF
FUNCTIONAL CHARACTERISTICS
(50 ohm system)
Common Source Power Gain
(V
DD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz)
G
ps
16.5
18.2
dB
Drain Efficiency
(V
DD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz)
η
56
60
%
Load Mismatch
(V
DD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz,
Load VSWR at 10:1 at All Phase Angles)
ψ
No Degradation in Output Power
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相關PDF資料
PDF描述
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