- 您現在的位置：買賣IC網 > PDF目錄371145 > MRF373ALSR1 (MOTOROLA INC) RF Power Field Effect Transistors PDF資料下載
參數資料
| 型號： | MRF373ALSR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-360S, CASE 360C-05, 2 PIN |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 481K |
| 代理商： | MRF373ALSR1 |
1
MRF373ALR1 MRF373ALSR1
Motorola, Inc. 2003
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
100% Tested for Load Mismatch Stress at All Phase Angles
with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW
Integrated ESD Protection
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal
Impedance Parameters
In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads.
L Suffix Indicates 40
μ″
Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
70
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
MRF373ALR1
MRF373ALSR1
P
D
197
1.12
278
1.59
Watts
W/
°
C
Watts
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF373ALR1
MRF373ALSR1
R
θ
JC
0.89
0.63
°
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
MRF373ALR1
MRF373ALSR1
M2 (Minimum)
M1 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF373A/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
470 - 860 MHz, 75 W, 32 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B-05, STYLE 1
NI-360
MRF373ALR1
CASE 360C-05, STYLE 1
NI-360S
MRF373ALSR1
MRF373ALR1
MRF373ALSR1
G
D
S
REV 4
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相關PDF資料 |
PDF描述 |
|---|---|
| MRF373R1 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF373SR1 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF374A | RF POWER FIELD EFFECT TRANSISTOR |
| MRF374 | RF Power MOSFETs(RF功率MOS場效應管) |
| MRF3866 | HIGH-FREQUENCY TRANSISTORS NPN SILICON |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF373ALSR5 | 功能描述:射頻MOSFET電源晶體管 75W RF PWR LDMOS NI360LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF373AR1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373ASR1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373R1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
發(fā)布緊急采購，3分鐘左右您將得到回復。