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參數(shù)資料
| 型號(hào)： | MRF373ALR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-360, CASE 360B-05, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 481K |
| 代理商： | MRF373ALR1 |
MRF373ALR1 MRF373ALSR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=1
μ
A)
V
(BR)DSS
70
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 200
μ
A)
V
GS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(V
DS
= 32 V, I
D
= 100 mA)
V
GS(Q)
2.5
3.3
4.5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 V, I
D
= 3 A)
V
DS(on)
—
0.41
0.45
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
C
iss
—
98.5
—
pF
Output Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
C
oss
—
49
—
pF
Reverse Transfer Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
C
rss
—
2
—
pF
FUNCTIONAL CHARACTERISTICS
(50 ohm system)
Common Source Power Gain
(V
DD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz)
G
ps
16.5
18.2
—
dB
Drain Efficiency
(V
DD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz)
η
56
60
—
%
Load Mismatch
(V
DD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz,
Load VSWR at 10:1 at All Phase Angles)
ψ
No Degradation in Output Power
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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| MRF373ALSR1 | RF Power Field Effect Transistors |
| MRF373R1 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF373SR1 | RF POWER FIELD EFFECT TRANSISTORS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF373ALR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF373ALR5 | 功能描述:射頻MOSFET電源晶體管 75W 860MHZ LDMOS NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF373ALSR1 | 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS 75W NI360S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF373ALSR5 | 功能描述:射頻MOSFET電源晶體管 75W RF PWR LDMOS NI360LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF373AR1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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