參數(shù)資料
型號(hào)： MRF372
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-860C3, CASE 375G-04, 4 PIN
文件頁(yè)數(shù)： 1/13頁(yè)
文件大小： 541K
代理商： MRF372
1
MRF372
Motorola, Inc. 2002
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in
32 volt transmitter equipment.
Typical Narrowband Two–Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — –35 dBc
Typical Broadband Two–Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — –31 dBc
Internally Matched, Controlled Q, for Ease of Use
Integrated ESD Protection
100% Tested for Load Mismatch Stress at All Phase Angles
with 3:1 VSWR @ 32 Vdc, f1 = 857 MHz, f2 = 863 MHz, 180 Watts PEP
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
(1)
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
68
Vdc
Gate–Source Voltage
V
GS
– 0.5, +15
Vdc
Drain Current – Continuous
I
D
17
Adc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
350
2.0
W
W/
°
C
Storage Temperature Range
T
stg
– 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.5
°
C/W
(1) Each side of device measured separately.
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF372/D
SEMICONDUCTOR TECHNICAL DATA
470 – 860 MHz, 180 W, 32 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 375G–04, STYLE 1
NI–860C3
REV 5
相關(guān)PDF資料
PDF描述
MRF373A RF Power Field Effect Transistors
MRF373ALR1 RF Power Field Effect Transistors
MRF373ALSR1 RF Power Field Effect Transistors
MRF373R1 RF POWER FIELD EFFECT TRANSISTORS
MRF373SR1 RF POWER FIELD EFFECT TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF372D 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR
MRF372R3 功能描述:射頻MOSFET電源晶體管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF372R5 功能描述:射頻MOSFET電源晶體管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF373 制造商:Freescale Semiconductor 功能描述:
MRF373A 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*