參數(shù)資料
型號: MRF284SR1
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF MOSFET(射頻MOS場效應(yīng)管)
中文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 360C-05, 3 PIN
文件頁數(shù): 8/12頁
文件大小: 239K
代理商: MRF284SR1
MRF284 MRF284SR1
8
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
G
G
Figure 5. Output Power & Power Gain
versus Input Power
35
Pin, INPUT POWER (WATTS)
5
0
2.0
15
25
Figure 6. Output Power versus Frequency
10
1800
1840
f, FREQUENCY (MHz)
45
25
15
1.0
3.0
3.5
35
P
2000
0
P
30
13
9
6
G
1880
1920
Figure 7. Intermodulation Distortion Products
versus Output Power
–20
Pout, OUTPUT POWER (WATTS) PEP
–80
Figure 8. Power Gain and Intermodulation
Distortion versus Supply Voltage
11
VDD, DRAIN SUPPLY VOLTAGE (Vdc)
8
10
I
Figure 9. Intermodulation Distortion
versus Output Power
0.1
Pout, OUTPUT POWER (WATTS) PEP
–60
10
–30
Figure 10. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
8
1.0
12
10
1.0
0.1
0.1
9
10
11
10
6
20
22
16
–40
–20
I
–40
28
–35
I
VDD = 26 Vdc
IDQ = 200 mA
f = 2000 MHz Single Tone
40
24
26
13
12
–30
–25
–20
–15
–10
–70
–60
–50
–40
20
30
Pout = 30 W (PEP)
IDQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
Gps
Gps
3rd Order
7th Order
5th Order
Pin = 1 W
4 W
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1.0
100 mA
IDQ = 400 mA
300 mA
200 mA
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
14
11
10
20
–30
18
VDD = 26 Vdc
IDQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
–50
Pout
1.5
0.5
2.5
VDD = 26 Vdc
IDQ = 200 mA
Single Tone
IMD
9
7
100 mA
IDQ = 400 mA
300 mA
200 mA
4.0
7
8
10
12
40
1860
1820
1900
1940 1960 1980
2 W
3 W
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