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參數(shù)資料
| 型號： | MRF21125 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880, CASE 465B-03, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 381K |
| 代理商： | MRF21125 |
MRF21125 MRF21125S MRF21125SR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
–
Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μ
Adc)
V
(BR)DSS
65
—
—
Vdc
Gate
–
Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
ON CHARACTERISTICS
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
g
fs
—
10.8
—
S
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 300
μ
A)
V
GS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 1300 mA)
V
GS(Q)
2.5
3.9
4.5
Vdc
Drain
–
Source On
–
Voltage
(V
GS
= 10 V, I
D
= 1 A)
V
DS(on)
—
0.12
—
Vdc
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
5.4
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture) 2
–
carrier W
–
CDMA, 3.84 MHz Channel Bandwidth, IM3 measured in 3.84 MHz Bandwidth.
Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Common
–
Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2
–
carrier W
–
CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
G
ps
12
13
—
dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2
–
carrier W
–
CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
η
17
18
—
%
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2
–
carrier W
–
CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; IM3 measured at f1
–
15 MHz and f2 +15 MHz referenced to
carrier channel power.)
IM3
—
–
43
–
40
dBc
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2
–
carrier W
–
CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; ACPR measured at f1
–
10 MHz and f2 +10 MHz referenced to
carrier channel power.)
ACPR
—
–
45
–
40
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2
–
carrier W
–
CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
IRL
—
–
12
–
9.0
dB
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 125 W CW, I
DQ
= 1600 mA, f = 2170 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Test)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MRF21125R3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF21125S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF21125SR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21180 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
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