- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371144 > MRF21090 (MOTOROLA INC) RF Power Field Effect Transistors PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF21090 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880, CASE 465B-03, 2 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 556K |
| 代理商： | MRF21090 |
MRF21090R3 MRF21090SR3
4
MOTOROLA RF DEVICE DATA
TYPICAL PERFORMANCE (IN MOTOROLA TEST FIXTURE)
η
P
out
, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
60
0
Figure 3. Class AB Broadband Circuit
Performance
2080
10
5
Figure 4. CDMA ACPR, Power Gain and Drain
Efficiency versus Output Power
20
0
30
20
15
20
30
40
V
DD
= 28 Vdc
P
out
= 90 W (PEP)
I
DQ
= 750 mA
TwoTone Measurement
100 kHz Tone Spacing
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
10
25
P
out
, OUTPUT POWER (WATTS) PEP
25
55
1
45
40
30
100
I
50
35
10
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and Intermodulation
Distortion versus Supply Voltage
P
out
, OUTPUT POWER (WATTS) PEP
15
101
12
14
100
G
11
13
V
DS
, DRAIN VOLTAGE (VOLTS)
11.8
11.0
11.4
11.6
34
20
22
28
10.8
11.2
10.6
10
32
24
26
30
2100
2120
2140
2160
2180
2200
50
35
30
25
20
15
10
5
5.0
10
15
70
60
50
40
30
20
A
V
DD
= 28 Vdc
f = 2140 MHz
TwoTone Measurement
100 kHz Tone Spacing
P
out
, OUTPUT POWER (WATTS) PEP
20
80
1
60
50
30
100
I
70
40
10
V
DD
= 28 Vdc
I
DQ
= 750 mA
f = 2140 MHz
TwoTone Measurement
100 kHz Tone Spacing
G
I
34
32
30
28
26
24
22
V
DD
= 28 Vdc
f = 2140 MHz
TwoTone Measurement
100 kHz Tone Spacing
P
out
= 90 W (PEP)
I
DQ
= 750 mA
f = 2140 MHz
TwoTone Measurement
100 kHz Tone Spacing
Fixture Tuned for 28 Volts
IRL
η
G
ps
IMD
ACPR
1000 mA
800 mA
1500 mA
500 mA
2000 mA
5th Order
7th Order
3rd Order
2000 mA
1500 mA
1000 mA
800 mA
500 mA
IMD
,
η
Gp
,
η
Gp
I
I
G
ps
G
ps
V
DD
= 28 Vdc
I
DQ
= 1000 mA
f = 2140 MHz
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF21090S | RF Power MOSFETs(RF功率MOS場(chǎng)效應(yīng)管) |
| MRF21120 | RF Power MOSFETs(RF功率MOS場(chǎng)效應(yīng)管) |
| MRF21125 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21125SR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21125S | RF POWER FIELD EFFECT TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21090R3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21090R3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21090SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21120 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF21120R6 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。