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參數(shù)資料
| 型號： | MRF21090 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 556K |
| 代理商： | MRF21090 |
MRF21090R3 MRF21090SR3
2
MOTOROLA RF DEVICE DATA
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
MRF21090R3
MRF21090SR3
2 (Minimum)
1 (Minimum)
Machine Model
MRF21090R3
MRF21090SR3
M3 (Minimum)
M4 (Minimum)
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μ
Adc)
V
(BR)DSS
65
—
—
Vdc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
ON CHARACTERISTICS
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
g
fs
—
7.2
—
S
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 300
μ
A)
V
GS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 750 mA)
V
GS(Q)
3
3.8
5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 V, I
D
= 1 A)
V
DS(on)
—
0.1
0.6
Vdc
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
4.2
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common-Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
G
ps
10
11.7
—
dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
η
30
33
—
%
Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
—
-30
-27.5
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
—
-12
-9.0
dB
Common-Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 75 W CW, I
DQ
= 750 mA, f = 2170 MHz)
G
ps
—
11.7
—
dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 75 W CW, I
DQ
= 750 mA, f = 2170 MHz)
η
—
41
—
%
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 90 W CW, I
DQ
= 750 mA, f = 2110 MHz,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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| MRF21090R3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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